Formation and characterization of single-step electrodeposited Cu2ZnSnS4 thin films: Effect of complexing agent volume
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولEffect of Annealing on Physical Properties of Cu2ZnSnS4 (CZTS) Thin Films for Solar Cell Applications
Cu2ZnSnS4 (CZTS) thin films were prepared by directly sputteringCu (In,Ga)Se2 quaternary target consisting of (Cu: 25%, Zn: 12.5%, Sn; 12.5%and S: 50%). The composition and structure of CZTS layers have beeninvestigated after annealing at 200 0C, 350 0C and 500 0C under vacuum. Theresults show that recrystallization of the CZTS thin film occurs and increasingthe grain size with a preferred orie...
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Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 p...
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Thin films of silver selenide have been prepared by chemical bath deposition technique at substrate temperature of 300K. The films were characterized by X-ray diffraction and UV-VIS spectrophotometer. Silver selenide thin films are polycrystalline with orthorhombic structure, confirmed by x-ray diffractogram. The deposition parameters were optimized to obtain good quality thin films. The film d...
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Galvanostatic electrodeposition was used to produce transparent and amorphous WO3 films that showed color changes from clear to blue in response to the applied potential of ±1.0 V. The 61% in transmittance variation was measured at wavelength of 633 nm. The roughness of 16.7 nm was obtained by atomic force microscopy (AFM). The scanning electron microscopy (SEM) evidenced homogeneous morphology...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2011
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2011.10.187